VBUS051BD-HD1 document number 81785 rev. 1.2, 16-apr-08 vishay semiconductors www.vishay.com 1 20 8 55 20 8 56 2 1 for technical support, please contact: esd-protection@vishay.com low capacitance, single-line esd-protection diode features ? ultra compact llp1006-2l package ? low package height < 0.4 mm ? 1-line esd-protection ? low leakage current < 0.1 a ? low load capacitance c d = 1.3 pf ? esd-protection to iec 61000-4-2 15 kv contact discharge 15 kv air discharge ? high surge current acc. iec61000-4-5 i pp > 3 a ? soldering can be checked by standard vision inspection. no x-ray necessary ? lead (pb)-free component ? pin plating nipdau (e4) no whisker growth ? "green" molding compound ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec marking (example only) dot = cathode marking x = date code y = type code (see table below) ordering information package data absolute maximum ratings 21121 xy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VBUS051BD-HD1 VBUS051BD-HD1-gs08 8000 8000 device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VBUS051BD-HD1 llp1006-2l a 0.72 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals parameter test conditions symbol value unit peak pulse current acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 3a peak pulse power acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 45 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 15 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 15 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 40 to + 150 c e4
www.vishay.com 2 document number 81785 rev. 1.2, 16-apr-08 VBUS051BD-HD1 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified VBUS051BD-HD1 application note the VBUS051BD-HD1 is an esd-protection device with the characteristic of a z-diode with a high esd-immunity and a very low capacitance which makes it usable for high frequency applications like usb2.0 or hdmi with the VBUS051BD-HD1 one high speed data line can be protected against transient voltage signals like esd (electro static discharge ). connected to the data line (pin 2) an d to ground (pin 1) negative transients will be clamped close below the ground level while positive transients will be clamped cl ose above the 5 v working range. the clamping behaviour of the VBUS051BD-HD1 is bidirectional but asymmetrical ( bias ) and so it offers the best protection for applications running up to 5 v. typical characteristics t amb = 25 c, unless otherwise specified parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of line wh ich can be protected n lines 1 lines reverse working voltage at i r = 0.1 a; pin 2 to pin 1 v rwm 5v max. reverse current at v r = v rwm = 5 v; pin 2 to pin 1 i r < 0.01 0.1 a min. reverse breakdown voltage at i r = 1 ma pin 2 to pin 1 v br 6.9 7.9 8.7 v max. clamping voltage at i pp = 3 a; acc. iec 61000-4-5; pin 2 to pin 1 v c 16 v max. forward clamping voltage at i f = 3 a; acc. iec 61000-4-5; pin 1 to pin 2 v f 1.9 2.5 v line capacitance at v r = 0 v; f = 1 mhz; pin 2 to pin 1 c d 1.3 1.8 pf figure 1. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 figure 2. 8/20 s peak pulse current wave form acc. iec 61000-4-5 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8
VBUS051BD-HD1 document number 81785 rev. 1.2, 16-apr-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: esd-protection@vishay.com figure 3. typical capacitance c d vs. reverse voltage v r figure 4. typical forward current i f vs. forward voltage v f figure 5. typical reverse voltage v r vs. reverse current i r 0 0.5 1 1.5 2 2.5 0123456 f = 1 mhz v r ( v ) c d (pf) 20 8 79 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 1 1.1 v f ( v ) i f (ma) 20 88 0 0 1 2 3 4 5 6 7 8 9 0.01 0.1 1 10 100 1000 10000 i r ( a) v r ( v ) 20 88 1 figure 6. typical peak clamping voltage v c vs. peak pulse current i pp figure 7. typical clamping performance at + 200 v contact discharge (acc. iec 61000-4-2) figure 8. typical clamping perf ormance at - 200 v contact discharge (acc. iec 61000-4-2) - 6 - 4 - 2 0 2 4 6 8 10 12 14 16 0123 i pp (a) v c ( v ) 20 88 2 meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) v c positi v e s u rge negati v e s u rge - 2 0 2 4 6 8 10 12 14 16 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 + 200 v contact discharge t (ns) v c-esd ( v ) 20 88 3 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 2 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 200 v contact discharge t (ns) v c-esd ( v ) 20 88 4
www.vishay.com 4 document number 81785 rev. 1.2, 16-apr-08 VBUS051BD-HD1 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com package dimensions in millimeters (inches): llp1006-2l figure 9. typical clamping perf ormance at + 6 kv contact discharge (acc. iec 61000-4-2) - 20 0 20 40 60 8 0 100 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 + 6 k v contact discharge t (ns) v c-esd ( v ) 20 88 5 figure 10. typical clamping performance at - 6 kv contact discharge (acc. iec 61000-4-2) - 140 - 120 - 100 - 8 0 - 60 - 40 - 20 0 20 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 6 k v contact discharge t (ns) v c-esd ( v ) 20 88 6 20 8 12 foot print re commendation: solder resist mask solder pad 0.55 [0.022] 0.45 [0.01 8 ] 0.25 [0.010] 0.15 [0.006] 0.45 [0.01 8 ] 0.35 [0.014] 0.3 [0.012] 0.2 [0.00 8 ] 0.4 [0.016] 0.33 [0.013] 1.05 [0.041] 0.95 [0.037] soldermask opening 0.03 meas u red middle of the package 0.05 [0.002] 0 [0.000] 0.125 [0.005] ref. 0.65 [0.026] 0.55 [0.022] 0.05 [0.002] 0.25 [0.010] 0.5 [0.020] 1 [0.039] 0.5 [0.020] 0.6 [0.024] 0.2 [0.00 8 ] rev. 2 - date: 22.october.2007 document no.: s8-v-3906.04-005 (4) orientation identification
VBUS051BD-HD1 document number 81785 rev. 1.2, 16-apr-08 vishay semiconductors www.vishay.com 5 for technical support, please contact: esd-protection@vishay.com ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vis hay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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